technical ceramic solutions

Search Results aluminum+nitride+substrate

Search Results for: aluminum+nitride+substrate

Q&A about aluminum nitride

1. Different applications in general * High brightness high power LED * Microwave wireless communication and semiconductor equipment * Automobile * Energy * IGBT Module * IPM Module 2. Do you have some references for the different applications? We don't have detailed information. With the development of the electric components, smaller but better performance and lower energy cost elements are pressing demand. The high dense, high power and a high-frequency component may generate as much as 100W/cm2 heat, such as high bright LED, MOSFET, IGBT and laser elements. The longer those elements work, the more heat accumulated. Due to the limited room in the package, if the heat could not have been diffused in time, it would highly affect the elements’life, performance and reliability. So, it is important to introduce good cooling package design and high thermal conductivity ceramic materials into these industries. 3.Can supply pictures of some products in the application? * IGBT Module * High brightness high power LED Automobile headlights; Industrial lighting; deep UV lamp; LCD background light source; Indoor agricultural lighting. * Components for semiconductor equipment 4. Do you have some standard dimensions or similar product descriptions? * ALN substrate is available in regular sizes Substrate...

Silicon Nitride Ceramic Substrate for Electronics

INNOVACERA Silicon Nitride substrates, with a thermal conductivity rating of 90 Watts/meter Kelvin, at first glance, appear inferior to Aluminum Nitride grades from the standpoint of heat dissipation. However, Silicon Nitride substrates, due to their far superior mechanical properties, can provide thermal resistance levels comparable to Aluminum Nitride. This is because Silicon Nitride substrates have twice the strength and fracture toughness of Aluminum Nitride substrates, which enable the circuit/package designer to use Silicon Nitride substrates that can be half as thick as Aluminum Nitride substrates. These same impressive mechanical properties also make Silicon Nitride substrates an excellent choice in applications where severe, repetitive thermal cycling of the circuit/package is present.

Aluminum Nitride Ceramic

Aluminum nitride (AlN) is a technical ceramic material that features an extremely interesting combination of very high thermal conductivity and excellent electrical insulation properties. It has a hexagonal crystal structure and is a covalent bonded material. The use of sintering aids and hot pressing is required to produce a dense technical grade material. The material is stable to very high temperatures in inert atmospheres. In air, surface oxidation begins above 700°C. A layer of aluminum oxide forms which protects the material up to 1370°C. Above this temperature bulk oxidation occurs. Aluminum nitride is stable in hydrogen and carbon dioxide atmospheres up to 980°C. The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalis through attack on the aluminum nitride grains. The material hydrolyzes slowly in water. Most current applications are in the electronics area where heat removal is important. This material is of interest as a non-toxic alternative to beryllia. Metallization methods are available to allow AlN to be used in place of alumina and BeO for many electronic applications. Properties Good dielectric properties High thermal conductivity Low thermal expansion coefficient, close to that of Silicon Non-reactive with normal semiconductor process chemicals and gases Application Substrates...

Centorr Vacuum Industries Sells Two High-Temperature Furnaces for Aluminum Nitride Production

Centorr Vacuum Industries announced it has shipped orders for two high-temperature sintering furnaces for 2015 delivery to a leading firm in the production of AlN substrates for the LED market in China. The designs include CVI's 2 cu ft graphite furnace for AlN sintering and a refractory metal furnace rated to 1850C for a secondary heating process. These new furnaces build on the success of CVI's experience in non-oxide ceramics and include modifications made specifically for high-temperature sintering of advanced ceramics. Centorr's graphite furnace design includes robust Graphite Tube and Block elements designed for use to 2250°C, with a 4-sided hot zone and integral graphite retort for excellent temperature uniformity. The rigid graphite insulation design provides for long-term service even in the presence of process off-gassing and residual binder contamination, while the new dual-flow Sweepgas® system allows more effective "sweeping" away of the process offgassing. Furnace control is via PLC/Programmable Controllers with Centorr's custom-designed HMI visualization interface. Centorr Vacuum Industries Sintervac Non-Oxide design is available in sizes of 2,3,4.5,9,16,24, and 54 cubic foot volumes. The refractory metal furnace design, sized at 1 cu ft will be used for a specific part of the AlN process where a non-graphite hot zone...

A brief introduction to HTCC

What is HTCC HTCC (High Temperature co-fired Ceramic) adopts tungsten, molybdenum, molybdenum, manganese, and other High melting point metal heat resistance paste printed on 92 ~ 96% alumina flow Ceramic green billet according to the design requirements of heat circuit, 4 ~ 8% sintering agent and then laminated multilayer. In 1500 ~ 1600°C under high temperature burning into a whole. Therefore, it has the advantages of corrosion resistance, high temperature resistance, long life, high efficiency and energy saving, uniform temperature, good thermal conductivity, fast thermal compensation, and does not contain lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyl, polybrominated diphenyl ethers, and other harmful substances, in line with the European Union RoHS environmental protection requirements. Due to the high firing temperature, HTCC cannot use gold, silver, copper and other low melting point metal materials, must use tungsten, molybdenum, manganese, and other refractory metal materials, these materials have low conductivity and will cause signal delay and other defects, so it is not suitable for high-speed or high-frequency microassembly circuit substrate. However, HTCC substrate has the advantages of high structural strength, high thermal conductivity, good chemical stability, and high wiring density, so it has a wide application prospect in high-power microasse. The classification...

TO 247 Ceramic Insulating Sheet

 TO-247 Ceramic Insulating Sheets by Innovacera have been developed to offer better thermal management in discrete semiconductor technologies like MOSFETs, IGBTs, and Power Transistors. As a silicone-based interface solution, this one uses more modern ceramics, Alumina (Al₂O₃), and Aluminum Nitride (AlN) which come in two different grades: one with 3.7mm cooling windows and another without any perforations. These ceramic substrates insulate electric currents very well, and at the same time, get rid of heat in power electronic assemblies. If you need related products or customization, please contact us.

What is TTV, Bow, Warp in Semiconductor Wafers

In wafer manufacturing, TTV, Bow, and Warp are essential parameters that determine wafer flatness and thickness uniformity, significantly impacting critical chip fabrication processes.     A.Definitions and Measurement Methods of TTV, Bow, and Warp   1.TTV (Total Thickness Variation)   Definition: TTV refers to the difference between the maximum and minimum thickness across the diameter of a wafer, assessing thickness uniformity.   Measurement: Measured in a non-clamped state, it calculates the deviation between the minimum and maximum distances from the wafer's center surface to a reference plane, including both concave and convex variations.   Importance: TTV ensures uniform thickness distribution during processing, preventing adverse effects on subsequent steps and final product performance. 2.Bow Definition: Bow indicates the curvature of a wafer, representing the vertical distance variation between the center and edges.   Measurement: In a free-standing state, the wafer's backside serves as a reference plane, and the deviation between the highest and lowest points on the wafer surface relative to this plane is measured.   Importance: Bow is a key parameter for assessing wafer quality and reliability. . Lower Bow values typically indicate cleaner, flatter surfaces with fewer defects during processing.   3.Warp   Definition: Warp refers to the overall distortion or irregular deformation...

Advantages of ceramics used in ion implanters

As an advanced semiconductor manufacturing equipment, ion implanters have very high requirements for the performance of materials. As an important component, ceramic accessories play a vital role in ion implanters.   A.Basic characteristics of ion implanter accessories and ceramic accessories     Ion implanter accessories are mainly made of high-purity silicon nitride, silicon carbide (SiC), alumina, alumina/silicon carbide microporous ceramics, aluminum nitride (AIN), sapphire and other ceramic materials, with the following characteristics:   1. High hardness and high strength: Ceramic fittings have high hardness and strength, which can withstand high load and wear during ion implantation.   2. High thermal stability: Ceramic fittings have a high melting point and can maintain stable performance in high temperature environments.   3. Good chemical stability: Ceramic accessories have good chemical stability and can work stably for a long time in harsh environments.   4. Excellent electrical insulation: Ceramic fittings have excellent electrical insulation, can withstand high voltage, and are suitable for electrical parts in ion implanters.   B. Advantages of ion implanter accessories and ceramic accessories   1. Improve ion implanter performance The excellent performance of the ceramic accessories of the ion implanter makes the ion implanter work stably in harsh environments, improving...
Enquiry