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Aluminum Nitride Substrates for Thermal Management

Aluminum Nitride (AlN) is a premier material for thermal management in high-power electronics due to its exceptional thermal conductivity and high electrical resistivity. AlN substrates are essential for components like high-power LEDs, laser diodes, and power modules, where efficient heat dissipation is critical for performance and reliability. Innovacera manufactures high-purity, hot-pressed Aluminum Nitride substrates and thermal pads, offering superior solutions for the most demanding thermal challenges in modern electronics.

Aluminum Nitride Substrate—Superior Thermal Conductivity

 Aluminum nitride (AlN) is a advanced technical ceramic material that features an extremely interesting combination of very high thermal conductivity(up to230 W/m.K) and excellent electrical insulation properties. If you need related products or customization, please contact us.

Aluminum Nitride Substrate

 Related Product Pages: https://www.innovacera.com/news/aluminum-nitride-substrate-2.html If you need related products or customization, please contact us.

Aluminum Nitride Substrate

Aluminum nitride (AlN) is a advanced technical ceramic material that features an extremely interesting combination of very high thermal conductivity(up to230 W/m.K) and excellent electrical insulation properties.     This makes aluminum nitride (AlN) ceramic substrate widely use in power electronics and microelectronics. For example, it is used as a circuit carrier (substrate) in semiconductors or as a heat-sink in LED lighting technology or high-power electronics.     Aluminum Nitride(AlN) Ceramic Substrate Advantages ·High thermal conductivity (170-230W/mK), up to 9.5 times than that of Aluminum Oxide ceramic substrate.   ·Similar coefficient of thermal expansion to that of silicon (Si), GaN, and GaAs semiconductors. This helps to achieve high reliability of silicon (Si) chip and thermal heat-up cycling.   ·High electrical insulation, and smaller dielectric constant.   ·High mechanical strength (450MPa).   ·Superior corrosion resistance against molten metal.   ·Very high purity, no toxicity.   Material Properties of AlN Ceramics: Properties Unit AN170 AN200 AN230 AN99 AN999 Color - Gray Gray Beige Gray Beige Content of AlN - ≥95% ≥95% ≥96% ≥99% ≥99.9% Bulk Density g/cm3 ≥3.30 ≥3.30  ≥3.28 ≥3.26 ≥3.25 Flexural Strength MPa ≥400 ≥300 ≥300 ≥300 ≥300 Compressive Strength MPa 2500 2000 2000 2000 2000 Hv 500g Gpa 10.5 9.5 9 9 9 Young’s Modulus Gpa...

Aluminum Nitride Wafer Substrates

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Aluminum Nitride Wafer Substrates: The Foundation for Semiconductors Manufacturing

Aluminum Nitride Wafer Substrates are a crucial component in the semiconductor industry, known for their exceptional thermal and electrical properties. Aluminum Nitride (AIN) materials have gained prominence due to their compatibility with silicon, making them ideal for a variety of wafer-related applications.   The Importance of Aluminum Nitride Wafer Substrates Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates, offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.   Key Features of Aluminum Nitride (AIN) Aluminum Nitride (AIN) stands out due to its impressive properties, which make it highly suitable for advanced semiconductor applications. Some of the most notable features include:   High Thermal Conductivity: AIN boasts a thermal conductivity range of 170-220 W/mK, which is crucial for dissipating heat in high-performance semiconductor devices.   High Electrical Insulation: The material’s excellent electrical insulation properties make it ideal for use...

Aluminum Nitride Wafer Substrates

Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.

Applications of Aluminum Nitride Ceramic Substrates for Integrated Circuits and Semiconductor Chip Mounts

Aluminum nitride is a non-natural existence of man-made crystals, with a hexagonal crystal system of fibrous zincite crystal structure, for the covalent bond is very strong compounds, lightweight, high strength, high heat resistance, corrosion resistance, has been used as a crucible for melting aluminum, but also an excellent performance of electronic ceramic materials.   Aluminum nitride ceramics with high thermal conductivity, low coefficient of expansion, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, is the ideal large-scale integrated circuit heat dissipation substrate and packaging materials, the main raw material for the manufacture of high thermal conductivity aluminum nitride ceramic substrate.     Aluminum Nitride Ceramic Substrate Advantages: 1. Excellent thermal conductivity 2. Low dielectric constant 3. Low dielectric loss 4. Reliable insulation properties 5. Excellent mechanical properties non-toxic 6. High temperature resistance and chemical corrosion resistance;   Due to the above performance, with the rapid development of microelectronic devices, high thermal conductivity aluminum nitride substrate, can be widely used in communication devices, high brightness LED, power electronics.   The thermal conductivity of aluminum nitride single crystal is about 250W, theoretically speaking, the thermal conductivity of aluminum nitride single crystal at room temperature can reach 320W,...
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