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Aluminum Nitride Substrates for Thermal Management

Aluminum Nitride (AlN) is a premier material for thermal management in high-power electronics due to its exceptional thermal conductivity and high electrical resistivity. AlN substrates are essential for components like high-power LEDs, laser diodes, and power modules, where efficient heat dissipation is critical for performance and reliability. Innovacera manufactures high-purity, hot-pressed Aluminum Nitride substrates and thermal pads, offering superior solutions for the most demanding thermal challenges in modern electronics.

Aluminum Nitride Substrate—Superior Thermal Conductivity

 Aluminum nitride (AlN) is a advanced technical ceramic material that features an extremely interesting combination of very high thermal conductivity(up to230 W/m.K) and excellent electrical insulation properties. If you need related products or customization, please contact us.

Aluminum Nitride Substrate

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Aluminum Nitride Substrate

Aluminum nitride (AlN) is a advanced technical ceramic material that features an extremely interesting combination of very high thermal conductivity(up to230 W/m.K) and excellent electrical insulation properties.     This makes aluminum nitride (AlN) ceramic substrate widely use in power electronics and microelectronics. For example, it is used as a circuit carrier (substrate) in semiconductors or as a heat-sink in LED lighting technology or high-power electronics.     Aluminum Nitride(AlN) Ceramic Substrate Advantages ·High thermal conductivity (170-230W/mK), up to 9.5 times than that of Aluminum Oxide ceramic substrate.   ·Similar coefficient of thermal expansion to that of silicon (Si), GaN, and GaAs semiconductors. This helps to achieve high reliability of silicon (Si) chip and thermal heat-up cycling.   ·High electrical insulation, and smaller dielectric constant.   ·High mechanical strength (450MPa).   ·Superior corrosion resistance against molten metal.   ·Very high purity, no toxicity.   Material Properties of AlN Ceramics: Properties Unit AN170 AN200 AN230 AN99 AN999 Color - Gray Gray Beige Gray Beige Content of AlN - ≥95% ≥95% ≥96% ≥99% ≥99.9% Bulk Density g/cm3 ≥3.30 ≥3.30  ≥3.28 ≥3.26 ≥3.25 Flexural Strength MPa ≥400 ≥300 ≥300 ≥300 ≥300 Compressive Strength MPa 2500 2000 2000 2000 2000 Hv 500g Gpa 10.5 9.5 9 9 9 Young’s Modulus Gpa...

Application of aluminum nitride substrate

Aluminum nitride products are attracting more and more attention as a new generation of high thermal conductivity materials due to their superior thermal conductivity, high insulation, and thermal expansion rate close to silicon. Features: High thermal conductivity: about 7 times the thermal conductivity of alumina Thermal expansion rate: thermal expansion is close to silicon, and the reliability of the mounting of large silicon wafers and heat-resistant cycles Electrical characteristics: high insulation, low dielectric coefficient Mechanical properties: superior to the mechanical properties of alumina Corrosion resistance: stronger than molten metal corrosion resistance Purity: low impurity content, non-toxic, high purity Application: High-power transistor module substrate High-frequency device substrate Heat-radiating insulation board for turn module Fixed substrate for semiconductor laser and light-emitting diode Hybrid integrated module, the ignition device module IC package Thermal module substrate Some products for semiconductor production equipment

Aluminum Nitride Wafer Substrates

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Aluminum Nitride Wafer Substrates: The Foundation for Semiconductors Manufacturing

Aluminum Nitride Wafer Substrates are a crucial component in the semiconductor industry, known for their exceptional thermal and electrical properties. Aluminum Nitride (AIN) materials have gained prominence due to their compatibility with silicon, making them ideal for a variety of wafer-related applications.   The Importance of Aluminum Nitride Wafer Substrates Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates, offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.   Key Features of Aluminum Nitride (AIN) Aluminum Nitride (AIN) stands out due to its impressive properties, which make it highly suitable for advanced semiconductor applications. Some of the most notable features include:   High Thermal Conductivity: AIN boasts a thermal conductivity range of 170-220 W/mK, which is crucial for dissipating heat in high-performance semiconductor devices.   High Electrical Insulation: The material’s excellent electrical insulation properties make it ideal for use...

Aluminum Nitride Wafer Substrates

Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6” aluminum nitride wafers and 8” AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.
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